It is an extremely versatile method for determining all parameters associated with deep traps including energy level, capture cross section and concentration distribution. DLTS is a destructive technique, as it requires forming either a Schottky diode or a p-n junction with a small sample, usually cut from a complete wafer. Majority carrier traps are observed by the application of a reverse bias pulse, while minority carrier traps can be observed by the application of a forward bias pulse.
Mandal Abstract Silicon carbide SiC is one of the key materials for high power opto-electronic devices due to its superior material properties over conventional semiconductors e. SiC is also very stable and a highly suitable material for radiation detection at room temperature and above.
The availability of detector grade single crystalline bulk SiC is limited by the existing crystal growth techniques which introduce extended and microscopic crystallographic defects during the growth process.
SiC Schottky barrier radiation detectors on epitaxial layers can be operated with a high signal-to-noise ratio even above room temperature due to its wide band-gap.
The Deep Level Transient Spectroscopy (DLTS) is the best technique for monitoring and characterizing deep levels caused by intentionally or unintentionally introduced impurities and defects in semiconductor materials and complete devices. Deep Level Transient Spectroscopy: A Powerful Experimental Technique for Understanding the Physics and Engineering of Photo-Carrier Generation, Escape, Loss and Collection Processes in Photovoltaic Materials. By Aurangzeb Khan and Yamaguchi Masafumi. Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H-SiC Giovanni Alﬁeria and Tsunenobu Kimoto Department of Electronic Science and Engineering, Kyoto University.
Unfortunately, the nature of these electrically active deep levels and their behavior are not well understood.
Therefore, it is extremely important to identify these electrically active defects present in the grown epitaxial layers and to understand how they affect the detector performance in terms of leakage current and energy resolution. In this work, Schottky barrier radiation detectors were fabricated on high quality n-type 4H-SiC epitaxial layers.
The epitaxial layers were grown on nitrogen doped n-type 4H-SiC substrates by a hot wall chemical vapor deposition CVD process.
The thickness of the detector window was decided such that there was minimal alpha energy attenuation while maintaining a reliable electrical contact. The junction properties of the fabricated Schottky barrier radiation detectors were characterized through current-voltage I-V and capacitance-voltage C-V measurements.
Alpha pulse-height spectra was obtained from the charge pulses produced by the detector irradiated with a standard 0.
The charge transport and collection efficiency results, obtained from the alpha particle pulse-height spectroscopy, were interpreted using a drift-diffusion charge transport model. The detector performances were evaluated in terms of the energy resolution.
From alpha spectroscopy measurements the FWHM full width at half maxima of the fabricated Schottky barrier detectors were in the range of 0. Deep level transient spectroscopy DLTS studies were conducted in the temperature range of 80 K - K to identify and characterize the electrically active defects present in the epitaxial layers.
Deep level defect parameters i. The observed defects in various epitaxial layers were identified and compared with the literature. The differences in the performance of different detectors were correlated on the basis of the barrier properties and the deep level defect types, concentrations, and capture cross-sections.
It was found that detectors, fabricated on similar wafers, can perform in a substantially different manner depending on the defect types. Defect parameters were calculated after each isochronal annealing.
Capture cross-sections and densities for all the defects were investigated to analyze the impact of annealing. Recommended Citation Mannan, M.DEEP LEVEL TRANSIENT SPECTROSCOPY AND UNIAXIAL STRESS SYSTEM by SHILIAN YANG, B.S.
A THESIS IN PHYSICS Submitted to the Graduate Faculty of Texas Tech University in Partial Fulfillment of the Requirements for the Degree of MASTER OF SCIENCE December, gmfiaBssrs. PC ^. modality of this technology called Charge-based Deep Level Transient Spectroscopy or Q-DLTS was developed to mitigate some of these problems by measuring charge .
Thesis advisor(s): Sherif Michael. Search the history of over billion web pages on the Internet. The DLTS (Deep Level Transient Spectroscopy) is one of the method used in measuring material properties such as energy levels and electrons and holes capture cross sections.
The device simulator: Atlas can specify an energy level and a capture cross section, and then, can simulate the DLTS signal. The design p~ciple and the data acquisition processing of a fiill-curve computerized deep level transient spectroscopy @Lm) system are descnbed in detail.
This system is more diable. flexible and accurate thau the conventionai methods in the dekirnination of deep Ievel traps in semiconductor devices.
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